Title of article
Field-induced resistance switching at metal/perovskite manganese oxide interface
Author/Authors
Ohkubo، نويسنده , , I. and Tsubouchi، نويسنده , , K. I. Harada، نويسنده , , T. and Kumigashira، نويسنده , , H. and Itaka، نويسنده , , K. and Matsumoto، نويسنده , , Y. and Ohnishi، نويسنده , , T. and Lippmaa، نويسنده , , M. and Koinuma، نويسنده , , H. and Oshima، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
3
From page
13
To page
15
Abstract
Planar type metal/insulator/metal structures composed of an epitaxial perovskite manganese oxide layer and various metal electrodes were prepared for electric-field-induced resistance switching. Only the electrode pairs including Al show good resistance switching and the switching ratio reaches its maximum of 1000. This resistance switching occurs around the interface between Al electrodes and epitaxial perovskite manganese oxide thin films.
Keywords
oxides , Metal–insulator–metal structures , Epitaxy of thin films
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2008
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2145671
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