Author/Authors :
Ohkubo، نويسنده , , I. and Tsubouchi، نويسنده , , K. I. Harada، نويسنده , , T. and Kumigashira، نويسنده , , H. and Itaka، نويسنده , , K. and Matsumoto، نويسنده , , Y. and Ohnishi، نويسنده , , T. and Lippmaa، نويسنده , , M. and Koinuma، نويسنده , , H. and Oshima، نويسنده , , M.، نويسنده ,
Abstract :
Planar type metal/insulator/metal structures composed of an epitaxial perovskite manganese oxide layer and various metal electrodes were prepared for electric-field-induced resistance switching. Only the electrode pairs including Al show good resistance switching and the switching ratio reaches its maximum of 1000. This resistance switching occurs around the interface between Al electrodes and epitaxial perovskite manganese oxide thin films.
