Defect and dopant kinetics in laser anneals of Si

In this work a modeling approach is applied to investigate the kinetics of the defect–dopant system in the extremely far-from-the equilibrium conditions caused by the laser irradiation in Si. A rigorous derivation of the master equations for the evolution of the defect–impurity system is obtained starting from the Boltzmann’s formalism. The model derived is not limited by the stringent hypothesis of instantaneous equilibration of the local system energy to the lattice thermal field. This fact allows: (a) the formalization of a reliable theoretical formalism for the study of evolving defect–impurity systems in a non-uniform fast varying thermal field and (b) the generalization of the kinetic parameters (e.g. diffusivity, clustering rate constants, etc.). Early comparisons between simulations and experimental analysis of the processes are discussed. These results indicate the reliability of the energetic calibration for the self-interstitial clusters derived using conventional thermal processes.