Title of article
Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition
Author/Authors
Cao، نويسنده , , Xun and Li، نويسنده , , Xiaomin and Yu، نويسنده , , Weidong and Liu، نويسنده , , Xinjun and He، نويسنده , , Xiliang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
36
To page
39
Abstract
TiO2 thin films were deposited on ITO (indium–tin-oxide)-buffered glass by pulsed laser deposition. Bipolar resistive switching behaviors of Ag/microcrystalline TiO2/ITO stacked structures were systematically investigated. Dependence of switching voltage and band gap energy on deposition temperature were also analyzed. Results indicate that the reset voltages and band gap energy (Eg) vary from −0.9 V to −6.8 V and 3.26 eV to 3.18 eV respectively, while the TiO2 films were formed from 300 °C to 600 °C. These bipolar switching phenomena have been also discussed based on the Schottky barrier at the Ag/TiO2 interface structure.
Keywords
pulsed laser deposition , TiO2 thin films , Resistive switching , Bipolar
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2009
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2146232
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