Title of article
The self-interstitial in silicon and germanium
Author/Authors
Jones، نويسنده , , R. and Carvalho، نويسنده , , A. N. Goss، نويسنده , , J.P. and Briddon، نويسنده , , P.R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
5
From page
112
To page
116
Abstract
Low temperature irradiation experiments show a remarkable contrast between Si and Ge, suggesting that the behavior of self-interstitials and vacancies is very different in the two materials. The present paper reviews theoretical and experimental investigations of the defects in an attempt to understand these differences.
Keywords
Vacancy , Theory , Frenkel pairs , Irradiation , Self-interstitial
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2009
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2146387
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