Competitive iron gettering between internal gettering sites and boron implantation in CZ-silicon

Competitive gettering of iron was studied in silicon wafers with internal gettering sites in the bulk and implanted boron region near the wafer surface. The experimental results indicate that iron precipitation in the implanted boron region is significant. We show that internal gettering can reduce precipitated iron concentration in the heavily boron doped device layer but the optimization of internal gettering is a challenging task as typically precipitation (nucleation) is faster in heavily boron doped region. We also perform simulations to support the experimental results. Simulation results were found to be in accordance with the experimental results.