Title of article
Annealing effects of Ga2O3–ZnO core-shell heteronanowires
Author/Authors
Kim، نويسنده , , Hyoun Woo and Lee، نويسنده , , Jong Woo and Kebede، نويسنده , , Mesfin Abayneh and Kim، نويسنده , , Hyo Sung and Lee، نويسنده , , Chongmu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
44
To page
47
Abstract
We prepared ZnO-coated Ga2O3 nanowires and investigated changes in the morphological, structural, and photoluminescence (PL) characteristics resulting from application of a thermal annealing process. With the thermal annealing at 800 °C, defect-associated PL peaks (2.2 and 2.6 eV) have been intensified with respect to the UV peak, and a new 2.8 eV-peak has been generated. Possible emission mechanisms are also discussed.
Keywords
D. Transmission electron microscopy (TEM) , B. Thermal properties , E. Annealing , D. X-ray diffraction (XRD) , A. fibres
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2009
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2146801
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