Monte Carlo simulation of bulk semiconductors for accurate calculation of drift velocity as a parameter for drift-diffusion, hydrodynamic models

This paper describes the Monte Carlo (MC) method which can be used for evaluation of macroscopic parameters of semiconductors (eq. drift velocity, mobility). The major advantage of this approach is that it is strongly based on the physics and can be used to characterize many semiconductor materials. Here, results are presented for the bulk Silicon, GaAs and the 4H-SiC. For the 4H-SiC the 2d map of drift velocity as a function of electric field and temperature has been obtained.