Title of article
Multiexcited state study in InAs DWELL structures
Author/Authors
Casas-Espinola، نويسنده , , J.L. and Torchynska، نويسنده , , T.V. and Polupan، نويسنده , , G.P. and Velazquez-Lozada، نويسنده , , E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
3
From page
115
To page
117
Abstract
The photoluminescence (PL) spectra, their power and temperature dependences have been investigated for ground and excited states in InAs quantum dots (QDs) embedded in symmetric In0.15Ga0.85As/GaAs quantum well (QW) (dot-in-a-well, DWELL) structures. QD density was 1.3 × 1010 cm−2. The temperature and power dependences of QD PL spectra as well as two stages of PL thermal quenching in the temperature range of 80–300 K and the reason for the variety of activation energies are discussed.
Keywords
DWELL structures , Photoluminescence , InAs quantum dots
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2009
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2147098
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