Title of article :
Multiexcited state study in InAs DWELL structures
Author/Authors :
Casas-Espinola، نويسنده , , J.L. and Torchynska، نويسنده , , T.V. and Polupan، نويسنده , , G.P. and Velazquez-Lozada، نويسنده , , E.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Abstract :
The photoluminescence (PL) spectra, their power and temperature dependences have been investigated for ground and excited states in InAs quantum dots (QDs) embedded in symmetric In0.15Ga0.85As/GaAs quantum well (QW) (dot-in-a-well, DWELL) structures. QD density was 1.3 × 1010 cm−2. The temperature and power dependences of QD PL spectra as well as two stages of PL thermal quenching in the temperature range of 80–300 K and the reason for the variety of activation energies are discussed.
Keywords :
DWELL structures , Photoluminescence , InAs quantum dots
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
