MIS field effect transistor with barium titanate thin film as a gate insulator

The properties of barium titanate (BaTiO3, BT) like, e.g. high dielectric constant and resistivity, allow it to find numerous applications in field of microelectronics. In this work silicon metal insulator semiconductor field effect transistor (MISFET) structures with BaTiO3 (containing La2O3 admixture) thin films in a role of gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2 wt.%) target. In the paper transfer and output current–voltage (I–V), transconductance and output conductance characteristics of obtained transistors are presented and discussed. Basic parameters of these devices like, e.g. threshold voltage (VTH), are determined and discussed.