Title of article
Direct evidence for shuffle dislocations in Si activated by indentations at 77 K
Author/Authors
Asaoka، نويسنده , , Kei and Umeda، نويسنده , , Takeshi and Arai، نويسنده , , Shigeo and Saka، نويسنده , , Hiroyasu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
93
To page
96
Abstract
Dislocations were introduced into Si at 77 K by Vickers indentation. The dislocations were identified to be of shuffle set by transmission electron microscopy including weak-beam imaging technique, high-resolution observation and in situ and ex situ heating.
Keywords
Dislocation , Silicon , TEM , 77 , K
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Serial Year
2005
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Record number
2147137
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