Title of article
On the core structures of dislocations in semiconductors
Author/Authors
Rabier، نويسنده , , Jacques and Demenet، نويسنده , , Jean-Luc and Denanot، نويسنده , , Marie-Françoise and Milhet، نويسنده , , Xavier، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
97
To page
100
Abstract
Dislocations in silicon are nucleated under high stresses as perfect ones in the shuffle set. It is shown that the same nucleation mechanism operates in hexagonal 4H-polytype SiC but, in contrast to silicon, perfect-shuffle configurations are unstable and transform by cross-slip into glide set dislocations.
Keywords
Silicon , silicon carbide , Dislocation , Semiconductors , High Stress
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Serial Year
2005
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Record number
2147138
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