Title of article
In-situ transmission electron microscopy study of glissile grain boundary dislocation relaxation in a near Σ = 3 {1 1 1} grain boundary in copper
Author/Authors
Couzinié، نويسنده , , J.P. and Décamps، نويسنده , , B. and Boulanger، نويسنده , , L. and Priester، نويسنده , , L.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
264
To page
267
Abstract
An in-situ annealing experiment has been performed on an intergranular dislocation configuration composed only of glissile grain boundary dislocations observed in a near Σ = 3 {1 1 1} grain boundary in copper. Relaxation phenomena are not obvious than those predicted by theoretical models. Upon annealing, glissile intergranular dislocations are shown to overcome dislocation obstacles by node movement leading to a decrease of the total grain boundary energy.
Keywords
In-situ transmission electron microscopy , Grain boundary , Extrinsic grain boundary dislocations , Copper
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Serial Year
2005
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Record number
2147200
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