• Title of article

    Analysis of donor–acceptor pairs and titanium related luminescence in different compensated 6H–SiC single crystals

  • Author/Authors

    Huang، نويسنده , , Wei and Chen، نويسنده , , Zhi-zhan and Chang، نويسنده , , Shao-hui and Li، نويسنده , , Zheng-zheng and Shi، نويسنده , , Er-wei، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    139
  • To page
    142
  • Abstract
    The photoluminescence of three kinds of compensated 6H–SiC single crystals, the vanadium heavily compensated, vanadium slightly compensated, and non-vanadium compensated, has been investigated. Nitrogen (N), aluminum (Al), vanadium (V), and titanium (Ti) are the main impurities. For the vanadium heavily compensated and non-vanadium compensated semi-insulating 6H–SiC, photoluminescence of the donor–acceptor pairs (DAPs) are inconspicuous because of the rare shallow centers. For vanadium slightly compensated 6H–SiC, DAPs and Ti-related emissions are obvious. As an effective luminescence center, the Ti-related recombinations cover a broad range from 1.70 eV to 2.86 eV.
  • Keywords
    doping effects , silicon carbide , Optical properties
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2010
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2147656