Title of article :
Electro-shape-memory effect in Mn-doped BaTiO3 single crystals and in situ observation of the reversible domain switching
Author/Authors :
Zhang، نويسنده , , L.X. and Ren، نويسنده , , X.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
6
From page :
354
To page :
359
Abstract :
Very recently a giant electric-field-induced recoverable shape change effect (electro-shape-memory effect) has been found in aged BaTiO3-based ferroelectric crystals. This effect is supposed to come from a reversible domain-switching process with the restoring force provided by a symmetry-conforming principle of defects. However, the reversible domain switching process itself behind the giant electro-shape-memory effect is yet to be directly verified. In the present study, we performed in situ domain observation during electric field cycling for aged Mn-doped BaTiO3 single crystals and simultaneously measured its macroscopic properties. It was found that the aged sample shows a reversible domain switching during electric field cycling; this corresponds very well to the electro-shape-memory effect (with a maximum shape change of 0.4%, which is almost half of the theoretical value). This provides a direct mesoscopic evidence for the defect-mediated reversible domain switching mechanism. Moreover, as all these effects stems from aging in ferroelectric state, we further explained that their microscopic origin is symmetry-conforming property of defects, which is completed during aging by defect migration.
Keywords :
Reversible domain switching , Defect symmetry , Electro-shape-memory effect
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Serial Year :
2006
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Record number :
2148081
Link To Document :
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