Title of article
An investigation on silar Cu(In1−xAlx)Se2 thin films
Author/Authors
Dhanam، نويسنده , , M. and Kavitha، نويسنده , , B. and Velumani، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
7
From page
209
To page
215
Abstract
Cu(In1−xAlx)Se2 [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition and electrical investigation of SILAR CIAS thin films with respect to two different dipping cycles have been discussed in this paper.
Keywords
SEM , CBD , SILAR , XRD , EDAX
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2010
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2148189
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