Title of article
On the conduction mechanism of p-type GaSb bulk crystal
Author/Authors
M. and Ebnalwaled، نويسنده , , A.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
5
From page
285
To page
289
Abstract
Bulk crystals of gallium antimonide were grown using the vertical Bridgman techniques. The phase formation was confirmed by XRD studies. From dc and ac conductivity measurements, the conduction mechanism was investigated. The mobility ratio and the effective mass ratio were calculated to be 1.56 and 3.36 respectively. The measurements reveal higher values of power factor than the published results for the same compound.
Keywords
antimonides , AC conductivity , DC conductivity , Power Factor , Bridgman technique
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2010
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2148223
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