Author/Authors :
C. Buttay، نويسنده , , Cyril and Planson، نويسنده , , Dominique and Allard، نويسنده , , Bruno and Bergogne، نويسنده , , Dominique and Bevilacqua، نويسنده , , Pascal and Joubert، نويسنده , , Charles and Lazar، نويسنده , , Mihai and Martin، نويسنده , , Christian and Morel، نويسنده , , Hervé and Tournier، نويسنده , , Dominique and Raynaud، نويسنده , , Christophe، نويسنده ,
Abstract :
High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500 °C, whereas silicon is limited to 150–200 °C. Applications such as transportation or a deep oil and gas wells drilling can benefit. A few converters operating above 200 °C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).
Keywords :
High-temperature electronics , Power Electronics , Semiconductor devices , silicon carbide
