Author/Authors :
Xi، نويسنده , , L. and Li، نويسنده , , X.Y. and Zhou، نويسنده , , J.J. and Du، نويسنده , , J.H. and Ma، نويسنده , , J.H. and Wang، نويسنده , , Z. and Lu، نويسنده , , J.M. and Zuo، نويسنده , , Y.L. and Xue، نويسنده , , D.S. and Li، نويسنده , , F.S.، نويسنده ,
Abstract :
FeCoNd thin film with thickness of 166 nm has been fabricated on silicon (1 1 1) substrates by magnetron co-sputtering and annealed for one hour under magnetic field at different temperatures (Ta) from 200 °C to 700 °C. The As-deposited and annealed FeCoNd film samples at Ta ≤ 500 °C were amorphous while the ones obtained at Ta ≥ 600 °C were crystallized. We found that the perpendicular anisotropy field gradually decreases as the annealing temperature increases from room temperature to 300 °C. A well induced in-plane uniaxial anisotropy is achieved at the annealing temperature between 400 and 600 °C. The variation of the dynamic magnetic properties of annealed FeCoNd films can be well explained by the Landau–Lifshitz equation with the variation of the anisotropy field re-distribution and the damping constant upon magnetic annealing. The magnetic annealing might be a powerful post treatment method for high frequency application of magnetic thin films.
Keywords :
Amorphous magnetic thin films , High-frequency magnetic properties , In-plane uniaxial anisotropy , Magnetic Annealing