Properties of pulse plated ZnSe films

ZnSe thin films were pulse plated on titanium and tin oxide substrates maintained at room temperature from the precursors. The films exhibited cubic structure. Optical band gap of 2.70 eV was obtained. XPS measurements indicated the formation of ZnSe. AFM studies indicated that the grain size decreased as the duty cycle decreased. Hot probe measurements indicated films to be n-type. Luminescence emission was observed at 675 nm for an excitation of 450 nm.