Author/Authors :
Schroth، نويسنده , , P. and Slobodskyy، نويسنده , , T. and Grigoriev، نويسنده , , D. and Minkevich، نويسنده , , A. and Riotte، نويسنده , , M. and Lazarev، نويسنده , , S. and Fohtung، نويسنده , , E. and Hu، نويسنده , , D.Z. and Schaadt، نويسنده , , D.M. and Baumbach، نويسنده , , T.، نويسنده ,
Abstract :
Self-organized, buried InAs quantum dots covered by an AlAs diffusion barrier were investigated under UHV conditions using grazing incidence X-ray diffraction. The experimental data is compared to the simulated results obtained by Finite Element Method and Distorted Wave Born Approximation. We have found that the simulated data could be compared to the experimental one only after convolution by the resolution element which can be estimated from the experiment. By adjusting the simulation parameters we were able to find good agreement between the simulated and the measured data.
Keywords :
Annealing , Molecular Beam Epitaxy , Grazing incidence X-ray diffraction , Self-organized quantum dots
