Author/Authors :
Kim، نويسنده , , Sunbo and Lee، نويسنده , , Jaehyeong and Dao، نويسنده , , Vinh Ai and Lee، نويسنده , , Seungho and Balaji، نويسنده , , Nagarajan and Ahn، نويسنده , , Shihyun and Hussain، نويسنده , , Shahzada Qamar and Han، نويسنده , , Sangmyeong and Jung، نويسنده , , Junhee and Jang، نويسنده , , Juyeon and Lee، نويسنده , , Yunjung and Yi، نويسنده , , Junsin، نويسنده ,
Abstract :
To improve the quantum efficiency (QE) and hence the efficiency of the amorphous/crystalline silicon heterojunction solar cell, we have employed a LiF dielectric layer on the rear side. The high dipole moment of the LiF reduces the aluminum electrodeʹs work–function and then lowers the energy barrier at back contact. This lower energy barrier height helps to enhance both the operating voltage and the QE at longer wavelength region, in turn improves the open-circuit voltage (Voc), short-circuit current density (Jsc), and then overall cell efficiency. With optimized LiF layer thickness of 20 nm, 1 cm2 heterojunction with intrinsic thin layer (HIT) solar cells were produced with industry-compatible process, yielding Voc of 690 mV, Jsc of 33.62 mA/cm2, and cell efficiencies of 17.13%. Therefore LiF/Al electrode on rear side is proposed as an alternate back electrode for high efficiency HIT solar cells.
