Experimental investigations of SiO2 based ferrite magnetic tunnel junction

We report experimental results of ferrite based magnetic tunnel junction. Ferrite junction and spin transport through SiO2 were interesting since they can readily replace the conventional electronics. We fabricated a cobalt ferrite/SiO2/cobalt nickel ferrite based magnetic tunnel junction over a copper coated n-silicon substrate using a RF/DC magnetron sputtering. The tunneling magnetoresistance shows a very good response to applied field and we achieved a TMR of about 16%. Although theoretically it was predicted infinite TMR for half metallic ferromagnetic junction, the deviation was explained on the basis of incoherent scattering along the interfaces.