Spin filtering in graphene nanoribbons with Mn-doped boron nitride inclusions

We investigate the spin filtering effects in graphene nanoribbons, where inclusions of hexagonal boron nitride were introduced together with substitutional magnetic impurities. The embedded Mn-doped boron nitride regions serve as quasi-0D islands of diluted magnetic semiconductor in the otherwise metallic graphene nanoribbon. Our first principle approach based on non-equilibrium Greenʹs functions gives the polarization of the spin current for structures with one or two Mn impurities as a function of the applied bias. For the two impurity case, ferromagnetic and antiferromagnetic spin configurations of the magnetic impurities are considered. The spin resolved current indicates that the analyzed structures are suitable for spin filter applications or for spin current switching devices.