Title of article :
Electrical anomaly in 2SrTiO3–SiO2 glass
Author/Authors :
Kim، نويسنده , , J.E. and Choi، نويسنده , , H.W. and KIM، نويسنده , , S.J. and Ohshima، نويسنده , , Ken-ichi and Yang، نويسنده , , Y.S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
We report the electrical properties of 2SrTiO3–SiO2 glass in the frequency range 100 ≤ f ≤ 107 Hz from 30 °C to near 600 °C. We have found that the anomalous dielectric constant decreases with the increase of annealing cycle and the heat-treated sample under oxygen atmosphere. The non-Debye behavior in the complex permittivity Cole–Cole formula has been used to interpret the relaxation mechanism of a dielectric anomaly. The activation energy for the relaxation process related to oxygen vacancies is in the range of 0.5–0.6 eV. The values of α are 0.76–0.84 for the sample of the various heat-treatment conditions. We have explained that the dielectric relaxation originates from the hopping of ions and local arrangement in this system.
Keywords :
oxygen vacancy , 2SrTiO3–SiO2 glass , Relaxation , Activation energy , Dielectric anomaly
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Journal title :
MATERIALS SCIENCE & ENGINEERING: A