The comparison of electrical characteristics of Au/n-InP/In and Au/In2S3/n-InP/In junctions at room temperature

We fabricated Au/n-InP/In and Au/In2S3/n-InP/In junctions and investigated their electrical properties at room temperature. The In2S3 thin film has been directly formed on n-type InP substrate with spray pyrolysis method at 200 °C substrate temperature. Detailed structural and optical properties of the film have been investigated by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and absorption techniques. The band gap energy of In2S3 by using spectral data of absorption has been determined to be about 2.80 eV. The values of the ideality factor and barrier height of the Au/n-InP/In and Au/In2S3/n-InP/In junctions have been found as n = 1.01, Φb = 0.469 eV and n = 1.07, Φb = 0.543 eV, respectively. Likewise, the values of barrier height and series resistance of both samples have been obtained from Norde method and they have been calculated as 0.456 eV, 59.081 Ω for Au/n-InP/In junction and 0.518 eV, 101.302 Ω for Au/In2S3/n-InP/In junction, respectively.