Author/Authors :
Ji، نويسنده , , Young-Su and Chung، نويسنده , , Sung Jae and Ok، نويسنده , , Myoung-Ryul and Hong، نويسنده , , Kyung Tae and Suh، نويسنده , , Jin-Yoo and Byeon، نويسنده , , Jai Won and Yoon، نويسنده , , Jin-Kook and Lee، نويسنده , , Kyung-Hwan and Lee، نويسنده , , Kyung Sub، نويسنده ,
Abstract :
The crystallization behavior of Cu43Zr43Al7Ag7 (numbers indicate at.%) bulk metallic glass was investigated using the isothermal electrical resistivity measurements at 450 °C in the supercooled liquid region. The crystallization process is a single step phase transformation. To analyze the electrical resistivity reduction, microstructure evolutions were analyzed using differential scanning calorimetry, X-ray diffraction, transmission electron microscopy and small-angle X-ray scattering. The Avrami parameter of the electrical resistivity reduction step was 1.73, indicating that the crystallization process is a diffusion-controlled growth of intermetallic compounds with decreasing nucleation rate.
Keywords :
Annealing , metallic glass , Electrical resistivity , crystallization
