Title of article :
Recent developments and applications in electroabsorption semiconductor modulators
Author/Authors :
Cunningham، نويسنده , , J.E.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
40
From page :
155
To page :
194
Abstract :
State of the art developments in electroabsorption modulators that utilize quantum well-semiconductors are reviewed. Special emphasis is given to recent progress made in materials for modulators. On technological grounds, optimized Multiple Quantum Well modulators in the GaAs/AlGaAs system have been driven by applications in photonic switching and optical interconnects. Surprisingly, these same structures exhibit a wealth of new behavior that ranges from Bloch oscillations to excitons in Coupled Well, Wannier–Stark and Shallow Well superlattices. Several types of excitonic phases have been identified, optically and found to transform as the system dimensionality changes from 2D to 3D. In addition, new material systems have shown that quantum well excitonic absorption quality can be transferred to technologically important wavelengths at 1.06 or 1.55 μm.
Journal title :
Materials Science and Engineering R Reports
Serial Year :
1999
Journal title :
Materials Science and Engineering R Reports
Record number :
2152384
Link To Document :
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