Title of article :
Recent advances in Schottky barrier concepts
Author/Authors :
Tung، نويسنده , , Raymond T.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis is placed on the examination of how these models agree with general physical principles. New concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.
Keywords :
Schottky-barrier height , Interface dipole , Interface states , Heterojunction band offsets
Journal title :
Materials Science and Engineering R Reports
Journal title :
Materials Science and Engineering R Reports