• Title of article

    Diffusion annealing of Mo/MoSi2 couple and silicon diffusivity in Mo5Si3 layer

  • Author/Authors

    S.L. and Chatilyan، نويسنده , , H.A. and Kharatyan، نويسنده , , S.L. and Harutyunyan، نويسنده , , A.B.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    6
  • From page
    227
  • To page
    232
  • Abstract
    Kinetics of molybdenum disilicide (MoSi2) layer transformation into Mo5Si3 one was studied at isothermal annealing of the MoSi2/Mo diffusion couple within the temperature interval 1200–1800 °C. It was revealed that the growth of intermediate silicide layer followed a parabolic law and did not accompanied by formation of the lowest Mo3Si silicide. By analyzing the diffusion problem solid-phase diffusion coefficient of silicon in the Mo5Si3 layer was calculated.
  • Keywords
    diffusion , Kinetics , silane , Molybdenum , Silicides
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Serial Year
    2007
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Record number

    2152502

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2152502