Threshold voltage shifting for memory and tuning in printed transistor circuits

Multiple mechanisms for controllably shifting the threshold voltage of printed and organic transistors have been identified during the last few years, including some just in the past year, that are analogous in some ways to silicon floating gate memory elements. In addition, printed electronic memory is emerging as a serious product technology for identification and banking cards and for responsive systems through the efforts of startup companies. Other circuit applications are also being identified. Memory and tuning are not as prominently discussed in the literature as simpler and more accessible topics such as display driving, charge carrier mobility, voltage reduction, and high-frequency response. This report summarizes the numerous approaches being considered for the definition and control of transistor threshold voltage in alternative electronic technologies, including the theoretical basis for the effects utilized. Higher and more reliable performance parameters and entirely new functionality are among the advantages to be highlighted.