Title of article
Studies of Mo/Si multilayers with coherent electron beams
Author/Authors
Gajdardziska-Josifovska، نويسنده , , M. and Weiss، نويسنده , , J.K. and Cowley، نويسنده , , J.M.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1995
Pages
14
From page
65
To page
78
Abstract
The Mo/Si multilayer system has been used to evaluate different methods employing coherent electrons from field-emission sources, in particular nanodiffraction and high-spatial-resolution parallel electron-energy-loss spectroscopy. Nanodiffraction patterns from the individual multilayer interfaces exhibited strong streaking on the transmitted disk, directed towards the Mo layer. The streaking increased with specimen thickness and reached a saturation value of ∼7 mrad. This effect can be interpreted as due to refraction of high-energy electrons at the interface, yielding a measured mean inner potential difference between Mo and Si of 8 ± 2 V. PEELS t/λ studies show that specimen thickness profiles are variable for the same multilayer sample. Core-loss integrated intensity profiles show asymmetry in interface width of sputtered multilayers, but proble deconvolution is needed to quantify the width of the intermixed interface. The nanodiffraction and PEELS methods are compared with previous studies with off-axis electron holography, shadow imaging, and with more established incoherent imaging methods.
Journal title
Ultramicroscopy
Serial Year
1995
Journal title
Ultramicroscopy
Record number
2154331
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