An approach to quantitative high-resolution transmission electron microscopy of crystalline materials

We describe how lattice images may be used to measure the variation of the projected potential in crystalline solids in any projection, with no knowledge of the imaging conditions. This approach is applicable to many solids with atoms residing entirely on coherent lattices, in which interfacial topography or changes in composition are of interest. We present atomic-level topographic maps of Si/SiO2 interfaces in plan-view, and compositional maps of Si/GeSi/Si quantum wells in cross-section. We conclude with a detailed discussion of the capabilities and limitations of this approach.