Author/Authors :
Gall-Borrut، نويسنده , , P. and Castagne، نويسنده , , M. and Weyher، نويسنده , , J.L. and Fillard، نويسنده , , J.P. and Bonnafe، نويسنده , , J.، نويسنده ,
Abstract :
Processed InP and GaAs surfaces are studied by synchronous atomic-force (AFM) and photon scanning tunneling microscopy (PSTM). A beam injection system at 1.06 μm in the transparency range of semiconductors is described which makes it possible to perform total internal reflection (TIR) without any specific preparation or shaping on standard wafers.
