Title of article :
Thermal instability of molybdenum and silicon tips
Author/Authors :
Yu، نويسنده , , Z.X. and Deng، نويسنده , , Sz-Shyan Wu، نويسنده , , S.S. and Zheng، نويسنده , , X.G. and Chen، نويسنده , , J and Xu، نويسنده , , N.S، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1999
Pages :
5
From page :
125
To page :
129
Abstract :
Thermal effects in molybdenum and silicon tips are analyzed with the aim of understanding the initiating mechanism of thermal instability leading to vacuum breakdown. A new theoretical treatment is employed to study the thermal response of tip emitters, which takes into account the correlative effect between field emission and its resultant temperature rise at the apex of tips. The results show that for a typical Si tip, thermal instability would occur before the tip temperature reaches its melting point, while thermal effect is not significant in the case of the Mo tip with the same geometry and dimension of a silicon tip. This remarkable difference between two types of tip is mainly due to their large discrepancies in electrical resistivity, but the Nottingham effect contributes significantly as well.
Keywords :
Thermal instability , Field emission , TIPS
Journal title :
Ultramicroscopy
Serial Year :
1999
Journal title :
Ultramicroscopy
Record number :
2155239
Link To Document :
بازگشت