Title of article :
Application of scanning tunneling-field emission microscopy for investigations of field electron emission from nanoscale diamond films
Author/Authors :
Frolov، نويسنده , , V.D. and Karabutov، نويسنده , , A.V. and Pimenov، نويسنده , , S.M. and Obraztsova، نويسنده , , E.D. and Konov، نويسنده , , V.I.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1999
Pages :
7
From page :
209
To page :
215
Abstract :
A special scanning tunneling-field emission microscope (STFEM) has been used for studying field electron emission from thin nanocrystalline diamond films grown by a DC plasma CVD. These are characterized by turn-on electric fields as low as 3.5 V/μm and by long-term stability of the emission current. Comparing different surface properties (topography, field electron emission intensity, surface potential and local electroconductivity distributions) on a large surface area it was found that, in most cases, emission centre position is not coincident with peaks of the surface profile. It has been noted that the diamond films studied are composed from nano-grained phases distinguished by their physical properties. These are thought to be diamond and graphitic phases. The low-field electron emission from the samples studied is considered to be associated with the presence of these phases. The results of the STFEM mapping have been compared with data on macroscopic current/field field emission characterization. The mechanisms governing low-field electron emission from nanoscale diamond films are discussed.
Journal title :
Ultramicroscopy
Serial Year :
1999
Journal title :
Ultramicroscopy
Record number :
2155258
Link To Document :
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