Title of article :
The orientation-dependent simulation of ELNES
Author/Authors :
Hébert-Souche، نويسنده , , C. and Louf، نويسنده , , P.-H. and Blaha، نويسنده , , P. and Nelhiebel، نويسنده , , M. and Luitz، نويسنده , , J. and Schattschneider، نويسنده , , P. and Schwarz، نويسنده , , K. and Jouffrey، نويسنده , , B.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2000
Pages :
8
From page :
9
To page :
16
Abstract :
We describe a program that allows the simulation of energy-loss near edge structure (ELNES). As an extension to the WIEN97 package (a full potential linearized augmented plane wave package for calculating crystal properties) [1] it permits to separate different contributions to the inelastic scattering cross section according to the character of the final state, explicitly taking into account projection onto scattering vector and integration over collection and convergence angle. Thus the program facilitates analysis of ELNES under precisely defined experimental conditions, and allows the investigation of anisotropic effects in ELNES from crystal structures. Dipole-allowed as well as dipole-forbidden transitions can be analyzed with this program.
Keywords :
Simulation , Electron energy-loss spectroscopy (EELS) , Energy-loss near edge structure (ELNES) , DOS , XANES
Journal title :
Ultramicroscopy
Serial Year :
2000
Journal title :
Ultramicroscopy
Record number :
2155433
Link To Document :
بازگشت