Polarity determination of III–V compound semiconductors by large-angle convergent beam electron diffraction

The large-angle convergent beam electron diffraction (LACBED) technique is used for determining the crystal polarity of GaP and GaAs single crystals from 〈1 1 0〉 cross-sectional samples. The method which is based on an earlier approach using convergent beam electron diffraction (CBED) evaluates the polarity-sensitive contrast of high odd-index Bragg-lines in {0 0 2} dark-field patterns. The polarity is determined by application of a simple contrast rule as well as by direct comparison with dynamical simulations. For the two materials the ranges of applicability are determined by a detailed analysis of the Bragg-line contrast as a function of the sample thickness. The coexistence of the Bragg-line pattern and the of shadow image of the defect in correct rotational relationship to each other makes the analysis straightforward and free from possible sources of errors. As an example, the crystal polarity of GaP is related to the morphology of facetted voids. The LACBED method is shown to be suitable for relating the analysis of extended crystal defects. The advantages and the disadvantages of the LACBED method are discussed in comparison with the corresponding CBED method and with a recent method based on the analysis of bend contours.