Dynamical simulations of zone axis electron channelling patterns of cubic silicon carbide

We have observed and simulated energy-dependent intensity distributions in electron channelling patterns (ECP) of cubic silicon carbide (3C SiC) which were recorded close to the (1 1 1) zone axis. The kinetic energies used were in the range from 4 to 8 keV, covering the low-energy region of the ECP technique. We explain the observed patterns by dynamical many beam simulations using a bloch wave approach for the diffraction of the incoming beam and the forward–backward-approximation for the backscattering of the electrons. The dynamical simulations reproduce the experimental patterns very well. It is found that higher-order Laue zone reflections are responsible for the strong energy sensitivity of the intensity distributions.