Author/Authors :
Wang، نويسنده , , D and Zou، نويسنده , , J and He، نويسنده , , W.Z. and Chen، نويسنده , , H and Li، نويسنده , , F.H and Kawasaki، نويسنده , , K and Oikawa، نويسنده , , T، نويسنده ,
Abstract :
The core structure of a dislocation complex in SiGe/Si system composed of a perfect 60° dislocation and an extended 60° dislocation has been revealed at atomic level. This is attained by applying the image deconvolution technique in combination with dynamical diffraction effect correction to an image taken with a 200 kV field-emission high-resolution electron microscope. The possible configuration of the dislocation complex is analyzed and their Burgers vectors are determined.
