Author/Authors :
Dengfeng، نويسنده , , Kuang and Qinggang، نويسنده , , Liu and Weilian، نويسنده , , Guo and Shilin، نويسنده , , Zhang and Xiaotang، نويسنده , , Hu، نويسنده ,
Abstract :
Thin titanium film (3∼8 nm thick) can be oxidized completely with atomic force microscope anodic oxidation to form a metal–insulator–metal structure to fabricate various nanodevices. Whether the Ti film is oxidized down to the bottom is vital to the nanodevices. We have fabricated a delicate Ti oxide structure of two triangles on about 3 nm thick Ti film. The theoretical calculation of the ratio of h ox / d Ti = 0.58 indicates the Ti film has been oxidized completely.
Keywords :
Nanotitanium film , AFM anodic oxidation , Nano-oxide structure , Conductivity