Author/Authors :
van Benthem، نويسنده , , Klaus and Lupini، نويسنده , , Andrew R. and Oxley، نويسنده , , Mark P. and Findlay، نويسنده , , Scott D. and Allen، نويسنده , , Leslie J. and Pennycook، نويسنده , , Stephen J.، نويسنده ,
Abstract :
Aberration correction in scanning transmission electron microscopy has more than doubled the lateral resolution, greatly improving the visibility of individual impurity or dopant atoms. Depth resolution is increased five-fold, to the nanometer level. We show how a through-focal series of images enables single Hf atoms to be located inside an advanced gate dielectric device structure to a precision of better than 0.1 × 0.1 × 0.5 nm . This depth sectioning method for three-dimensional characterization has potential applications to many other fields, including polycrystalline materials, catalysts and biological structures.
