Title of article :
The influence of relativistic energy losses on bandgap determination using valence EELS
Author/Authors :
Stِger-Pollach، نويسنده , , M. and Schattschneider، نويسنده , , P.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2007
Pages :
8
From page :
1178
To page :
1185
Abstract :
Since monochromated transmission electron microscopes have become available, the determination of bandgaps and optical properties using electron energy loss spectrometry (EELS) has again attracted interest. The underlying idea is very simple: below the bandgap energy no transitions can contribute to the valence EELS signal. However, the bandgap cannot be directly read out from the recorded data. Therefore the optical properties cannot be determined correctly from the low loss using the Kramers–Kronig relations. We will discuss under which conditions relativistic effects may be surpressed. It is demonstrated that scanning TEM (STEM) geometry is not applicable for most bandgap measurements.
Keywords :
eels , Kramers–Kronig , bandgap , Semiconductors
Journal title :
Ultramicroscopy
Serial Year :
2007
Journal title :
Ultramicroscopy
Record number :
2157066
Link To Document :
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