Title of article :
A model of secondary electron imaging in the helium ion scanning microscope
Author/Authors :
Ramachandra، نويسنده , , Ranjan and Griffin، نويسنده , , Brendan and Joy، نويسنده , , David، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2009
Pages :
10
From page :
748
To page :
757
Abstract :
A combination of the ‘semi-empirical’ model for secondary electron production and the TRIM routines which describe ion stopping power, scattering, and transport, has been used to construct a Monte Carlo simulation (IONiSE) that can quantitatively interpret the generation of secondary electrons (SE) from materials by fast helium ions. This approach requires that the parameters of the semi-empirical model be determined by fitting to experimental yield data but has the merit that, unlike more fundamental models, it can be applied with equal ease to both pure elements and complex compounds. The application of the model to predict the topographic yield variation of helium generated SE as a function of energy and material, and to investigate the ratio between SE generated by incident and backscattered ions, is demonstrated.
Keywords :
Secondary electrons , Helium ions , Scanning microscopy
Journal title :
Ultramicroscopy
Serial Year :
2009
Journal title :
Ultramicroscopy
Record number :
2157607
Link To Document :
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