Title of article
Oscillation behavior of a high-temperature silicon droplet by the electromagnetic levitation technique superimposed with a static magnetic field
Author/Authors
Ozawa، نويسنده , , S. and Takenaga، نويسنده , , N. and Koda، نويسنده , , T. and Hibiya، نويسنده , , T. and Kobatake، نويسنده , , H. and Fukuyama، نويسنده , , H. and Adachi، نويسنده , , M. and Watanabe، نويسنده , , M. and Awaji، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
50
To page
53
Abstract
When a static magnetic field was applied to a Si droplet levitated by an electromagnetic force, only one peak was observed to remain in the frequency spectrum. It was the objective of this work to clarify whether this peak can be assigned to the m = ± 2 oscillation or to the rotation of the droplet. By analyzing the behavior of the deflection angle of the droplet in a top view, we conclude that this peak is not due to the surface oscillation of the droplet but to the droplet rotation.
Keywords
Oscillating droplet method , Sample rotation , thermophysical property , Surface oscillation , electromagnetic levitation
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Serial Year
2008
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Record number
2157948
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