Title of article :
Influence of oxygen partial pressure on the wetting of SiC by a Co–Si alloy
Author/Authors :
Mailliart، نويسنده , , O. and Hodaj، نويسنده , , F. and Chaumat، نويسنده , , V. and Eustathopoulos، نويسنده , , N.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
7
From page :
174
To page :
180
Abstract :
In this investigation the influence of oxygen partial pressure P O 2 on the wetting of SiC by a Co–Si alloy was studied. Wetting experiments were carried out in argon with different oxygen contents (from 5 to 1000 ppm). The relationship between wetting and deoxidation of surfaces (SiC and Co–Si alloy) was investigated. Calculations were performed to evaluate the temperature range over which deoxidation is possible. These calculations are in agreement with the experimental results.
Keywords :
Oxidation , silicon carbide , Interfaces , Wetting , Silicides
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Serial Year :
2008
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Record number :
2158009
Link To Document :
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