• Title of article

    The effect of electron range on electron beam induced current collection and a simple method to extract an electron range for any generation function

  • Author/Authors

    Lahreche، نويسنده , , A. and Beggah، نويسنده , , Y. and Corkish، نويسنده , , R.، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2011
  • Pages
    9
  • From page
    1343
  • To page
    1351
  • Abstract
    The effect of electron range on electron beam induced current (EBIC) is demonstrated and the problem of the choice of the optimal electron ranges to use with simple uniform and point generation function models is resolved by proposing a method to extract an electron range–energy relationship (ERER). The results show that the use of these extracted electron ranges remove the previous disagreement between the EBIC curves computed with simple forms of generation model and those based on a more realistic generation model. The impact of these extracted electron ranges on the extraction of diffusion length, surface recombination velocity and EBIC contrast of defects is discussed. It is also demonstrated that, for the case of uniform generation, the computed EBIC current is independent of the assumed shape of the generation volume.
  • Keywords
    Semiconductor materials measurements , EBIC , Electron-beam applications , Generation function , Electron penetration , Charge injection
  • Journal title
    Ultramicroscopy
  • Serial Year
    2011
  • Journal title
    Ultramicroscopy
  • Record number

    2158378