Diffraction contrast STEM of dislocations: Imaging and simulations

The application of scanning transmission electron microscopy (STEM) to crystalline defect analysis has been extended to dislocations. The present contribution highlights the use of STEM on two oppositely signed sets of near-screw dislocations in hcp α - Ti with 6 wt% Al in solid solution. In addition to common systematic row diffraction conditions, other configurations such as zone axis and 3g imaging are explored, and appear to be very useful not only for defect analysis, but for general defect observation. It is demonstrated that conventional TEM rules for diffraction contrast such as g · b and g · R are applicable in STEM. Experimental and computational micrographs of dislocations imaged in the aforementioned modes are presented.