Title of article :
Low voltage EELS—How low?
Author/Authors :
Stِger-Pollach، نويسنده , , M.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2014
Pages :
7
From page :
98
To page :
104
Abstract :
Using low beam energies in a (scanning) transmission electron microscope (S/TEM) has numerous advantages over higher beam energies. We discuss the performance of commonly available electron microscopes when being operated at reduced beam energies. Further on, we discuss the merits of low beam energies concerning the determination of the optical properties of Si as well as of buried quantum structures. For this purpose we have aligned a conventional S/TEM and the attached energy loss spectrometer for 13 keV and 60 keV, respectively. Finally we identify the key parameters for setting up a low voltage electron energy loss spectrometry (EELS) experiment.
Keywords :
Valence EELS , Delocalization , Optical properties
Journal title :
Ultramicroscopy
Serial Year :
2014
Journal title :
Ultramicroscopy
Record number :
2159334
Link To Document :
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