• Title of article

    Low voltage EELS—How low?

  • Author/Authors

    Stِger-Pollach، نويسنده , , M.، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2014
  • Pages
    7
  • From page
    98
  • To page
    104
  • Abstract
    Using low beam energies in a (scanning) transmission electron microscope (S/TEM) has numerous advantages over higher beam energies. We discuss the performance of commonly available electron microscopes when being operated at reduced beam energies. Further on, we discuss the merits of low beam energies concerning the determination of the optical properties of Si as well as of buried quantum structures. For this purpose we have aligned a conventional S/TEM and the attached energy loss spectrometer for 13 keV and 60 keV, respectively. Finally we identify the key parameters for setting up a low voltage electron energy loss spectrometry (EELS) experiment.
  • Keywords
    Valence EELS , Delocalization , Optical properties
  • Journal title
    Ultramicroscopy
  • Serial Year
    2014
  • Journal title
    Ultramicroscopy
  • Record number

    2159334