Author/Authors :
Garcia، نويسنده , , Alejandra and Raya، نويسنده , , Andres M. and Mariscal، نويسنده , , Marcelo M. and Esparza، نويسنده , , Rodrigo Jiliberto Herrera، نويسنده , , Miriam and Molina، نويسنده , , Sergio I. and Scavello، نويسنده , , Giovanni and Galindo، نويسنده , , Pedro L. and Jose-Yacaman، نويسنده , , Miguel and Ponce-de-Leَn، نويسنده , , Arturo، نويسنده ,
Abstract :
In this work we examined MoS2 sheets by aberration-corrected scanning transmission electron microscopy (STEM) at three different energies: 80, 120 and 200 kV. Structural damage of the MoS2 sheets has been controlled at 80 kV according a theoretical calculation based on the inelastic scattering of the electrons involved in the interaction electron–matter. The threshold energy for the MoS2 material has been found and experimentally verified in the microscope. At energies higher than the energy threshold we show surface and edge defects produced by the electron beam irradiation. Quantitative analysis at atomic level in the images obtained at 80 kV has been performed using the experimental images and via STEM simulations using SICSTEM software to determine the exact number of MoS2 layers.
Keywords :
Radiation damage , Low-voltage transmission electron microscopy , Aberration-corrected microscopy , molybdenum disulfide
