Author/Authors :
Estivill، نويسنده , , Robert and Grenier-Loustalot، نويسنده , , Adeline and Duguay، نويسنده , , Sébastien and Vurpillot، نويسنده , , François and Terlier، نويسنده , , Tanguy and Barnes، نويسنده , , Jean-Paul and Hartmann، نويسنده , , Jean-Michel and Blavette، نويسنده , , Didier، نويسنده ,
Abstract :
The quantification of carbon and germanium in a Si/SiGeC multilayer structure using atom probe tomography has been investigated as a function of analysis conditions. The best conditions for quantitative results are obtained using an intermediate electric field and laser power. Carbon evaporation shows strong spatial and temporal correlation. By using multi-ion event analysis, an evaporation mechanism is put forward to explain the modification of mass spectra as a function of electric field and laser power.
Keywords :
Atom probe , SiGe quantification , Carbon doped SiGe , Multi-events , Molecular ions
